Transistors RF MOSFET Power RF LDMOS TO272-6N FLAT
MRF1570FNT1: Transistors RF MOSFET Power RF LDMOS TO272-6N FLAT
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Configuration : | Dual | Transistor Polarity : | N-Channel | ||
Frequency : | 470 MHz | Gain : | 11.5 dB | ||
Output Power : | 70 W | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-272-8 EP | Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | -0.5, +40 | Vdc |
Gate-Source Voltage | VGS | ± 20 | Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 165 0.5 |
W W/°C |
Storage Temperature Range | Tstg | - 65 to +150 | °C |
Operating Junction Temperature | TJ | 200 | °C |