MRF157

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tray
Drain-Source Breakdown Voltage : 125 V
Frequency : 80 MHz
Gain : 21 dB at 30 MHz
Output Power : 600 W
Continuous Drain Current : 60 A
Gate-Source Breakdown Voltage : +/- 40 V
Package / Case : Case 368-03


Description

The MRF157 is a kind of power field effect transistor. It is N-channel enhancement mode. The device is designed primarily for linear largesignal output stages to 80 MHz.

The following is about the absolute maximum ratings MRF157: (1)drain-source voltage, VDSS: 125 Vdc; (2)drain-gate voltage, VDGO: 125 Vdc; (3)gate-source voltage, VGS: ±40 Vdc; (4)drain current, continuous, ID: 60 Adc; (5)total device dissipation @ TC=25, PD: 1350 W; (6)storage temperature range, Tstg: -65 to +150; (7)operating junction temperature, TJ: 200.

The last one is about the electrical characteristics (TC=25 unless otherwise noted) of MRF157: (1)drain-source breakdown voltage (VGS=0, ID=100 mA), V(BR)DSS: 125 Vdc min; (2)zero gate voltage drain current (VDS=50 V, VGS=0), IDSS: 20 mAdc max ; (3)gate-body leakage current (VGS=20 V, VDS=0), IGSS: 5.0 Adc max; (4)gate threshold voltage (VDS=10 V, ID=100 mA), VGS(th): 1.0 Vdc min, 3.0 Vdc typ and 5.0 Vdc max; (5)drain-source on-voltage (VGS=10 V, ID=40 A), VDS(on): 1.0 Vdc min, 3.0 Vdc typ and 5.0 Vdc max; (6)forward transconductance (VDS=10 V, ID=20 A), gfs: 16 mhos min and 24 mhos typ; (7)input capacitance (VDS=50 V, VGS=0 V, f=1.0 MHz), Ciss: 1800 pF typ; (8)output capacitance (VDS=50 V, VGS=0, f=1.0 MHz), Ciss: 750 pF typ; (9)reverse transfer capacitance (VDS=50 V, VGS=0, f=1.0 MHz), Crss: 75 pF typ.