Transistors RF MOSFET Power LDMOS FET HI PWR TO272FN
MRF1550FNT1: Transistors RF MOSFET Power LDMOS FET HI PWR TO272FN
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 175 MHz | Gain : | 14.5 dB |
Output Power : | 50 W | Drain-Source Breakdown Voltage : | 40 V |
Continuous Drain Current : | 12 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-272-6 EP |
Packaging : | Reel |