Transistors RF MOSFET Power RF Transistor
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Packaging : | Tray |
Rating | Symbol | Value | Unit |
Drain−Source Voltage | VDSS | 125 | Vdc |
DrainGate Voltage | VDGO | 125 | Vdc |
Gate−Source Voltage | VGS | ±40 | Vdc |
Drain Current - Continuous | ID | 60 | Adc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 1350 7.7 |
Watts W/°C |
Storage Temperature Range | Tstg | −65 to +150 | °C |
Operating Junction Temperature | TJ | 200 | °C |