MRF1535NT1

Transistors RF MOSFET Power RF LDMOS FET TO-272N

product image

MRF1535NT1 Picture
SeekIC No. : 00219506 Detail

MRF1535NT1: Transistors RF MOSFET Power RF LDMOS FET TO-272N

floor Price/Ceiling Price

US $ 6.88~12.11 / Piece | Get Latest Price
Part Number:
MRF1535NT1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $12.11
  • $10.32
  • $9.54
  • $6.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 520 MHz Gain : 13.5 dB
Output Power : 35 W Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 6 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : TO-272-6 WARP EP
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 40 V
Frequency : 520 MHz
Gain : 13.5 dB
Output Power : 35 W
Continuous Drain Current : 6 A
Package / Case : TO-272-6 WARP EP


Features:

• Specified Performance @ 520 MHz, 12.5 Volts
     Output Power - 35 Watts
     Power Gain - 10.0 dB
     Efficiency - 50%
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• Broadband−Full Power Across the Band: 135−175 MHz
                                                                   400−470 MHz
                                                                   450−520 MHz
• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
• N Suffix Indicates Lead−Free Terminations
• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.



Specifications

Rating Symbol Value Unit
Drain−Source Voltage VDSS −0.5, +40 Vdc
Gate−Source Voltage VGS ±20 Vdc
Drain Current - Continuous ID 6 Adc
Total Device Dissipation @ TC = 25°C (1)
                         Derate above 25°C
PD 135
0.50
Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 175 °C



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Discrete Semiconductor Products
Test Equipment
Soldering, Desoldering, Rework Products
View more