Transistors RF MOSFET Power RF LDMOS FET TO-272N
MRF1535NT1: Transistors RF MOSFET Power RF LDMOS FET TO-272N
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 520 MHz | Gain : | 13.5 dB |
Output Power : | 35 W | Drain-Source Breakdown Voltage : | 40 V |
Continuous Drain Current : | 6 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-272-6 WARP EP |
Packaging : | Reel |
Rating | Symbol | Value | Unit |
Drain−Source Voltage | VDSS | −0.5, +40 | Vdc |
Gate−Source Voltage | VGS | ±20 | Vdc |
Drain Current - Continuous | ID | 6 | Adc |
Total Device Dissipation @ TC = 25°C (1) Derate above 25°C |
PD | 135 0.50 |
Watts W/°C |
Storage Temperature Range | Tstg | −65 to +150 | °C |
Operating Junction Temperature | TJ | 175 | °C |