Transistors RF MOSFET Power RF LDMOS FET TO-272N
MRF1535FNT1: Transistors RF MOSFET Power RF LDMOS FET TO-272N
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Configuration : | Single Quad Source | Transistor Polarity : | N-Channel | ||
Drain-Source Breakdown Voltage : | 40 V | Continuous Drain Current : | 6 A | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-272 EP-6 | Packaging : | Reel |