Transistors RF MOSFET Power RF Transistor
MRF151GC: Transistors RF MOSFET Power RF Transistor
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 175 MHz | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 40 A | Gate-Source Breakdown Voltage : | 40 V |
Maximum Operating Temperature : | + 200 C | Package / Case : | SOT-262A |
Packaging : | Tray |