MRF151G

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Packaging : Tray
Output Power : 300 W
Drain-Source Breakdown Voltage : 125 V
Continuous Drain Current : 40 A
Gate-Source Breakdown Voltage : +/- 40 V
Frequency : 175 MHz
Package / Case : Case 375-04
Gain : 14 dB


Features:

• Guaranteed Performance at 175 MHz, 50 V:
Output Power - 300 W
Gain - 14 dB (16 dB Typ)
Efficiency - 50%
• Low Thermal Resistance - 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability




Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VDSS	125	Vdc
DrainGate Voltage	VDGO	125	Vdc
GateSource Voltage	VGS	±40	Vdc
Drain Current - Continuous	ID	40	Adc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	500 2.85	Watts W/°C
Storage Temperature Range	Tstg	65 to +150	°C
Operating Junction Temperature	TJ	200	°C

Description

The MRF151G is one kind of RF power field-effect transistor that designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

Features of the MRF151G are:(1)guaranteed performance at 175 MHz, 50 V:output power-300 W;gain-14 dB (16 dB typ);efficiency-50 %;(2)low thermal resistance-0.35°C/W;(3)ruggedness tested at rated output power;(4)nitride passivated die for enhanced reliability.

The absolute maximum ratings of the MRF151G can be summarized as:(1)drain-source voltage:125 Vdc;(2)drain-gate voltage:125 Vdc;(3)gate-source voltage:±40 Vdc;(4)drain current-continuous:40 Adc;(5)total device dissipation @ TC=25°C:500 Watts;(6)total device derate above 25°C:2.85 W/°C;(7)storage temperature range:-65 to +150°C;(8)operating junction temperature:200 °C.If you want to know more information such as the electrical character-istics about the MRF151G,please download the datasheet in www.seekic.com or www.chinaicmart.com .