Transistors RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB
MRF151: Transistors RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 175 MHz | Gain : | 13 dB |
Output Power : | 150 W | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 16 A | Gate-Source Breakdown Voltage : | +/- 40 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 211-11 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VCBO |
125 |
Vdc |
DrainGate Voltage |
VEBO |
125 |
Vdc |
GateSource Voltage |
ID |
±40 |
Adc |
Drain Current - Continuous |
IC |
16 |
Watts W/°C |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
300 1.71 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +150 | °C |
Operating Junction Temperature |
TJ |
200 | °C |
MRF151 is Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.