Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB
MRF150: Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 150 MHz | Gain : | 17 dB at 30 MHz |
Output Power : | 150 W | Drain-Source Breakdown Voltage : | 125 V |
Continuous Drain Current : | 16 A | Gate-Source Breakdown Voltage : | +/- 40 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 211-11 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
125 |
Vdc |
DrainGate Voltage |
VDGO |
125 |
Vdc |
GateSource Voltage |
VGS |
±40 |
Vdc |
Drain Current - Continuous |
ID |
16 |
Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
300 1.7 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |