Transistors RF MOSFET Power RF Transistor
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 175 MHz | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 16 A | Gate-Source Breakdown Voltage : | 40 V |
Maximum Operating Temperature : | + 200 C | Package / Case : | Case 211-11 |
Packaging : | Tray |
ID | 16 A |
VDSS | 65 V |
VGS | ±40 V |
PDISS | 300 W @ TC = 25 °C |
TJ | -65 °C to +200 °C |
TSTG | -65 °C to +200 °C |
JC | 0.6 °C/W |
The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications.