MRF137

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 40 V
Frequency : 400 MHz
Package / Case : Case 211-07
Gain : 13 dB at 150 MHz
Continuous Drain Current : 5 A
Output Power : 30 W


Features:

• Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency - 60% (Typical)
• SmallSignal and LargeSignal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Low Noise Figure - 1.5 dB (Typ) at 1.0 A, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VDSS	65	Vdc
DrainGate Voltage (RGS = 1.0 M)	VDGO	65	Vdc
GateSource Voltage	VGS	±40	Vdc
Drain Current - Continuous	ID	5.0	Adc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	100 0.571	Watts W/°C
Storage Temperature Range	Tstg	65 to +150	°C
Operating Junction Temperature	TJ	200	°C

Description

MRF137 is designed for wideband largesignal output and driver stages up to 400 MHz range.