MRF136

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 40 V
Frequency : 400 MHz
Gain : 16 dB at 150 MHz
Output Power : 15 W
Continuous Drain Current : 2.5 A
Package / Case : Case 211-07


Features:

• Guaranteed 28 Volt, 150 MHz Performance

MRF136

Output Power = 15 Watts Narrowband Gain = 16 dB (Typ) Efficiency = 60% (Typical)
• SmallSignal and LargeSignal Characterization
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Space Saving Package For PushPull Circuit Applications - MRF136Y
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques

MRF136Y

`Output Power = 30 Watts Broadband Gain = 14 dB (Typ) Efficiency = 54% (Typical)


Specifications

Rating	Symbol	Value		Unit
		MRF136	MRF136Y
DrainSource Voltage	VDSS	65	65	Vdc
DrainGate Voltage (RGS = 1.0 M)	VDGR	65	65	Vdc
GateSource Voltage	VGS	±40		Vdc
Drain Current - Continuous	ID	2.5	5.0	Adc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	55 0.314	100 0.571	Watts W/°C
Storage Temperature Range	Tstg	65 to +150		°C
Operating Junction Temperature	TJ	200		°C

Description

MRF136 is designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range, in either single ended or pushpull configuration.