Transistors RF MOSFET Power 5-400MHz 5 Watts 28Volt Gain 11dB
MRF134: Transistors RF MOSFET Power 5-400MHz 5 Watts 28Volt Gain 11dB
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 400 MHz | Gain : | 14 dB at 150 MHz |
Output Power : | 5 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 0.9 A | Gate-Source Breakdown Voltage : | +/- 40 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 211-07 |
Packaging : | Tray |
Rating | Symbol | Value | Unit |
DrainSource Voltage | VDSS | 65 | Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR | 65 | Vdc |
GateSource Voltage | VGS | ±40 | Vdc |
Drain Current - Continuous | ID | 0.9 | Adc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 17.5 0.1 |
Watts W/°C |
Storage Temperature Range | Tstg | 65 to +150 | °C |