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MRF134

Transistors RF MOSFET Power 5-400MHz 5 Watts 28Volt Gain 11dB

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SeekIC No. : 00219490 Detail

MRF134: Transistors RF MOSFET Power 5-400MHz 5 Watts 28Volt Gain 11dB

MRF134 Data Sheet

floor Price/Ceiling Price

US $ 11.44~18.53 / Piece | Get Latest Price
Part Number:
MRF134
Mfg:
M/A-COM Technology Solutions
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $18.53
  • $12.13
  • $11.78
  • $11.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 400 MHz Gain : 14 dB at 150 MHz
Output Power : 5 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 0.9 A Gate-Source Breakdown Voltage : +/- 40 V
Maximum Operating Temperature : + 150 C Package / Case : Case 211-07
Packaging : Tray    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 40 V
Frequency : 400 MHz
Package / Case : Case 211-07
Gain : 14 dB at 150 MHz
Output Power : 5 W
Continuous Drain Current : 0.9 A


Features:

• Guaranteed 28 Volt, 150 MHz Performance
   Output Power = 5.0 Watts
   Minimum Gain = 11 dB
   Efficiency - 55% (Typical)
• SmallSignal and LargeSignal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W
   Output = 10.6 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Low Noise Figure - 2.0 dB (Typ) at 200 mA, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A Operation


Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
DrainGate Voltage
               (RGS = 1.0 M)		 VDGR 65 Vdc
GateSource Voltage VGS ±40 Vdc
Drain Current - Continuous ID 0.9 Adc
Total Device Dissipation @ TC = 25°C
       Derate above 25°C		 PD 17.5
0.1		 Watts
W/°C
Storage Temperature Range Tstg 65 to +150 °C



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