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MRF10150

Features: • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ)• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR• Hermetically Sealed Package• Silicon Nitride Passivated• Gold Metallized, Emitter Ballasted ...

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MRF10150: Features: • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ)• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR• Herm...

MRF10150 Data Sheet

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Part Number:
MRF10150
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Guaranteed Performance @ 1090 MHz
     Output Power = 150 Watts Peak
     Gain = 9.5 dB Min, 10.0 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Hermetically Sealed Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input and Output Matching
• Characterized with 10 s, 10% Duty Cycle Pulses
• Recommended Driver for a Pair of MRF10500 Transistors


Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCES 65 Vdc
CollectorBase Voltage VCBO 65 Vdc
EmitterBase Voltage VEBO 3.5 Vdc
Collector Current - Peak (1) IC 14 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
      Derate above 25°C		 PD 700
4.0		 Watts
W/°C
Storage Temperature Range Tstg 65 to + 200 °C
Junction Temperature TJ 200 °C



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