MRB11175Y

MRB11175Y is a kind of NPN silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications at 1.09 GHz.

There are some technological advantages of MRB11175Y as follows. First is interdigitated structure giving a high emitter efficiency. The second is diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR. Besides, gold metallization realizes very good stability of the characteristics and excellent life time. At last, it is multicell geometry gives good balance of dissipated power and thermal resistance.

What comes next is about the ratings (TA = 25) of MRB11175Y. The maximum VCBO (collector-base voltage, open emitter) is 65 V. The maximum VCES (collector-emitter voltage, RBE=0, open base) is 25 V. The maximum VEBO (emitter-base voltage) is 3.0 V. The maximum IC (collector current) is 12.5 A when tp10s, 1%. The maximum Ptot (total power dissipation) is 500 W when tp10s, 1%. The junction temperature is from 200. The storage temperature range is from -65 to +150. The soldering temperature is 235. Then is about the thermal resistance (at Tj=75). The maximum Rth j-amb (thermal resistance from junction to mounting base under pulsed conditions: tp10s, 1%) is 0.08 K/W.