Features: `High speed up to 1066 MHz RDRAM storage`184 edge connector pads with 1mm pad spacing`Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25 x 1.375 x 0.05 )`Each RDRAM device has 32 banks, for a total of 512 banks on 1.1GB module`Gold plated edge connector pad contacts`Serial Presence De...
MR18R326GAG0: Features: `High speed up to 1066 MHz RDRAM storage`184 edge connector pads with 1mm pad spacing`Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25 x 1.375 x 0.05 )`Each RDRAM device has 32 banks,...
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Features: `High speed up to 1066 MHz RDRAM storage`184 edge connector pads with 1mm pad spacing`Mo...
Symbol | Parameter |
Min |
Max |
Unit |
VI,ABS | Voltage applied to any RSL or CMOS signal pad with respect to Gnd |
- 0.3 |
VDD + 0.3 |
V |
V DD,ABS | Voltage on VDD with respect to Gnd |
- 0.5 |
VDD + 1.0 |
V |
TSTORE | Storage temperature |
- 50 |
100 |
°C |
TPLATE | Plate temperature |
- |
92 |
°C |