MPSA63

Transistor Polarity : PNP
Mounting Style : Through Hole
Configuration : Single
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 10 V
Maximum Collector Cut-off Current : 0.1 uA
Collector- Base Voltage VCBO : 30 V
Power Dissipation : 625 mW
Package / Case : TO-92
Packaging : Box


Specifications

Symbol	Parameter	Value	Units
VCES	Collector-Emitter Voltage	30	V
VCBO	Collector-Base Voltage	30	V
VEBO	Emitter-Base Voltage	10	V
IC	Collector Current - Continuous	1.2	A
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle perations.

Parameters:

Technical/Catalog Information	MPSA63
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	5 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 100A, 100mA
Frequency - Transition	125MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPSA63 MPSA63 MPSA63OS ND MPSA63OSND MPSA63OS