MPSA43

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 50 MHz (Min)
Maximum DC Collector Current : 0.2 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Collector- Emitter Voltage VCEO Max : 200 V


Features:

· Low current (max. 100 mA)
· High voltage (max. 300 V).




Application

· Video
· Telephony
· Professional communication equipment.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage MPSA42 MPSA43	open emitter	- -	300 200	V V
VCEO	collector-emitter voltage MPSA42 MPSA43	open base	- -	300 200	V V
VEBO	emitter-base voltage	open collector	-	6	V
IC	collector current (DC)		-	100	mA
ICM	peak collector current		-	200	mA
IBM	peak base current		-	100	mA
Ptot	total power dissipation	Tamb 25;	-	500	mW
TSTG	Storage temperature		65	+150
Tj	junction temperature		-	150
Tamb	operating ambient temperature		-65	+150

Description

MPSA43 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement: MPSA92.




Parameters:

Technical/Catalog Information	MPSA43
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	200mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic	400mV @ 2mA, 20mA
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPSA43 MPSA43