MPSA29RLRP

Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 0.5 A
Maximum Collector Cut-off Current : 0.1 uA
Power Dissipation : 625 mW
Package / Case : TO-92
Emitter- Base Voltage VEBO : 12 V
Packaging : Ammo


Parameters:

Technical/Catalog Information	MPSA29RLRP
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 10mA, 10mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	500nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Cut Tape (CT)
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPSA29RLRP MPSA29RLRP MPSA29RLRPOSCT ND MPSA29RLRPOSCTND MPSA29RLRPOSCT