MPS6651

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Package / Case : TO-92
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50


Description

The absolute maximum ratings of the MPS6651 are: (1)collector-emitter voltage: 25V; (2)collector-base voltage: 25V; (3)emitter-base voltage: 4V; (4)collector current: 1A; (5)collector dissipation: 625mW; (6)junction temperature: 150; (7)storage temperature: -55 to 150.

The following is about the electrical characteristics of MPS6651: (1)collector-emitter breakdown voltage: 25V min at IC=1mA, IB=0; (2)collector-base breakdown voltage: 25V min IC=100A, IE=0; (3)emitter-base breakdown voltage: 4V min at IE=10A, IC=0; (4)collector cut-off current: 100nA max at VCB=25V, IE=0; (5)DC current gain: 50 min at VCE=25V, IB=0, IC=100mA, VCE=1V; (6)collector-emitter saturation voltage: 0.6V max at IC=1A, IB=100mA; (7)output capacitance: 30pF max at VCB=10V, IE=0, f=100kHz; (8)base-emitter on voltage: 1.2V max at IC=500mA, VCE=1V; (9)current gain bandwidth product: 100MHz min at IC=50mA, VCE=10V, f=30MHz; (10)turn on time: 55ns max at VCC=40V, IC=500mA, IB1=50mA; (11)turn off time: 300ns max at VCC=40V, IC=500mA, IB1=50mA

Parameters:

Technical/Catalog Information	MPS6651
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	1A
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPS6651 MPS6651