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MPS6602G

Transistors Bipolar (BJT) 1A 30V NPN

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SeekIC No. : 00211784 Detail

MPS6602G: Transistors Bipolar (BJT) 1A 30V NPN

MPS6602G Data Sheet

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Part Number:
MPS6602G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Collector- Emitter Voltage VCEO Max : 30 V


Parameters:

Technical/Catalog InformationMPS6602G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)1A
Power - Max1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MPS6602G
MPS6602G
MPS6602GOS ND
MPS6602GOSND
MPS6602GOS



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