MPS6602

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Collector- Emitter Voltage VCEO Max : 30 V


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage MPS6601/6651 MPS6602/6652	VCEO	25 40	Vdc
CollectorBase Voltage MPS6601/6651 MPS6602/6652	VCBO	25 30	Vdc
EmitterBase Voltage	VEBO	4.0	Vdc
Collector Current - Continuous	IC	1000	mAdc
Total Device Dissipation @ TC = 25 Derate above 25	PD	625 5.0	mW mW/
Total Device Dissipation @ TC = 25 Derate above 25	PD	1.5 12	Watts mW/
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150

Parameters:

Technical/Catalog Information	MPS6602
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	1A
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MPS6602 MPS6602 MPS6602OS ND MPS6602OSND MPS6602OS