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MPS6601

Transistors Bipolar (BJT) 1A 25V NPN

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SeekIC No. : 00214735 Detail

MPS6601: Transistors Bipolar (BJT) 1A 25V NPN

MPS6601 Data Sheet

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Part Number:
MPS6601
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Emitter- Base Voltage VEBO : 4 V
Maximum Operating Frequency : 100 MHz (Min)
Maximum DC Collector Current : 1 A
Collector- Emitter Voltage VCEO Max : 25 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50


Parameters:

Technical/Catalog InformationMPS6601
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Current - Collector (Ic) (Max)1A
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Straight Leads)
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MPS6601
MPS6601
MPS6601OS ND
MPS6601OSND
MPS6601OS



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