MPS3706

Maximum DC Collector Current :
Maximum Operating Frequency :
Packaging :
Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
DC Collector/Base Gain hfe Min : 30


Description

The MPS3706 is a kind of silicon planar epitaxial transistor for general purpose AF medium power applications. The device is available in CASE TO-92A.

What comes next is about the absolute maximum ratings of MPS3706: (1)collector to base voltage, VCBO: 40 V; (2)collector to emitter voltage, VCEO: 20 V; (3)emitter to base voltage, VEBO: 5 V; (4)collector current, IC: 0.8 A; (5)total power dissipation, Ptot: 1 W at TC25 and 360 mW at TA25; (6)operating junction and storage temperature, Tj, Tstg: -55 to +150.

The following is about the electrical characteristics of MPS3706 at Ta=25: (1)collector-base breakdown voltage, BVCBO: 40 V min at IC=0.1 mA, IE=0; (2)collector-emitter breakdown voltage, LVCEO: 20 V min at IC=10 mA, IB=0; (3)emitter-base breakdown voltage, BVEBO: 5 V min at IE=0.1 mA, IC=0; (4)collector cutoff current, ICBO: 100 nA max at VCB=20 V, IE=0; (5)emittor cutoff current, IEBO: 100 nA max at VEB=3 V, IC=0; (6)DC current gain, hFE: 30 min and 600 max at VCE=2 V, IC=50 mA; (7)gain-bandwidth product, fT: 100 MHz min at VCE=5 V, IC=50 mA; (8)output capacitance, cob: 4 pF typ and 12 pF max at VCB=10 V, f=1 MHz, IE=0; (9)collector-emitter saturation voltage, VCE(sat): 0.15 V typ and 1 V max at IC=100 mA, IB=5 mA; (10)base-emitter voltage, VBE: 0.5 V min, 0.83 V typ and 1 V max at IC=100 mA, VCE=2 V.