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MPS3563G: Transistors Bipolar (BJT) 50mA 12V NPN

MPS3563G Data Sheet

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Part Number:: MPS3563G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Upload time: 2024/5/19

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MPS3390 evaluate
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US $.12 - .16 / Piece

Transistors Bipolar (BJT) NPN Gen Pur SS

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	12 V
Emitter- Base Voltage VEBO :	2 V	Maximum DC Collector Current :	0.05 A
DC Collector/Base Gain hfe Min :	20 at 8 mA at 10 V	Configuration :	Single
Maximum Operating Frequency :	1500 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 12 V
Emitter- Base Voltage VEBO : 2 V
Packaging : Bulk
Maximum DC Collector Current : 0.05 A
Maximum Operating Frequency : 1500 MHz
DC Collector/Base Gain hfe Min : 20 at 8 mA at 10 V

Parameters:

Technical/Catalog Information	MPS3563G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Current - Collector (Ic) (Max)	50mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8mA, 10V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	1.5GHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MPS3563G MPS3563G MPS3563GOS ND MPS3563GOSND MPS3563GOS

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MPS3563G

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