MPS2222A

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
Maximum Operating Frequency : 300 MHz (Min)
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 35 at 0.1 mA at 10 V


Features:

·NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications.
· On special request, this transistor is also manufactured in the pin configuration TO-18.
· This transistor is also available in the SOT-23 case with the type designation MMBT2222A



Specifications

	SYMBOL	VALUE	UNIT
Collector-Base Voltage	VCBO	75	Volts
Collector-Emitter Voltage	VCEO	40	Volts
Emitter-Base Voltage	VEBO	6.0	Volts
Collector Current-Continuous	IC	600	mA
Power Dissipation at TA=25 Derate above 25	Ptot	625 5.0	mW mW/
Power Dissipation at TC=25 Derate above 25	Ptot	1.5 12	W mW/
Thermal Resistance, Junction to Ambient Air	RQJA	200	/W
Thermal Resistance Junction to Case	RQJC	83.3	/W
Junction Temperature	Tj	150
Storage Temperature Range	TS	Ð55 to +150