Features: • Floating Channel Designed for Bootstrap Operation• Fully Operational to +600 V• Tolerant to Negative Transient Voltage• dV/dt Immune• Gate Drive Supply Range from 10 to 20 V• Undervoltage Lockout for Both Channels• CMOS Schmitttriggered Inputs ...
MPIC2111: Features: • Floating Channel Designed for Bootstrap Operation• Fully Operational to +600 V• Tolerant to Negative Transient Voltage• dV/dt Immune• Gate Drive Supply Rang...
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Rating |
Symbol |
Min |
Max |
Unit |
High Side Floating Supply Absolute Voltage High Side Floating Supply Offset Voltage High Side Floating Output Voltage Low Side Fixed Supply Voltage Low Side Output Voltage Logic Input Voltage |
VB VS VHO VCC VLO VIN LO |
0.3 VB25 VS0.3 0.3 0.3 0.3 |
625 VB+0.3 VB+0.3 25 VCC+0.3 VCC+0.3 |
VDC |
Allowable Offset Supply Voltage Transient |
dVS/dt |
50 |
V/ns | |
*Package Power Dissipation @ TC +25 (8 Lead DIP) (8 Lead SOIC) |
PD |
|
1.0 0.625 |
Watt |
Thermal Resistance, Junction to Ambient (8 Lead DIP) (8 Lead SOIC) |
RqJA |
|
125 200 |
/W |
Operating and Storage Temperature |
Tj, Tstg |
-55 |
150 |
|
Lead Temperature for Soldering Purposes, 10 seconds |
TL |
260 |
|
The MPIC2111 is a high voltage, high speed, power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers MPIC2111 feature a high pulse current buffer stage designed for minimum driver crossconduction. Internal deadtime is provided to avoid shootthrough in the output halfbridge. The floating channel of MPIC2111 can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts.