MPF960

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Power - Max: 1W
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 2A
Mounting Type: Through Hole
Packaging: Bulk
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Input Capacitance (Ciss) @ Vds: 70pF @ 25V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 1A, 10V


Specifications

Rating	Symbol	MPF930	MPF960	MPF990	Unit
DrainSource Voltage	VDS	35	60	90	Vdc
DrainGate Voltage	VDG	35	60	90	Vdc
GateSource Voltage - Continuous - Nonrepetitive (tp 3 50 ms)	VGS VGSM	±20 ±40			Vdc Vpk
Drain Current Continuous(1) Pulsed(2)	ID IDM	2.0 3.0			Adc
Total Device Dissipation @ TA = 25 Derate above 25	PD	1.0 8.0			Watts mW/
Operating and Storage Junction Temperature Range	TJ ,Tstg	55 to 150
Thermal Resistance	qJA	125