MP6404

Application• 4-V gate drivability• Small package by full molding (SIP 12 pins)• High drain power dissipation (6-device operation) : PT = 36 W (Tc = 25 )• Low drain-source ON resistance: RDS (ON) = 120 m (typ.) (Nch) 160 m (typ.) (Pch) • High forward transfer admittanc...

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SeekIC No. : 004425891 Detail

MP6404: Application• 4-V gate drivability• Small package by full molding (SIP 12 pins)• High drain power dissipation (6-device operation) : PT = 36 W (Tc = 25 )• Low drain-source ON ...

floor Price/Ceiling Price

Part Number:
MP6404
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Application

• 4-V gate drivability
• Small package by full molding (SIP 12 pins)
• High drain power dissipation (6-device operation) : PT = 36 W (Tc = 25 )
• Low drain-source ON resistance: RDS (ON) = 120 m (typ.) (Nch) 160 m (typ.) (Pch)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch) 4.0 S (typ.) (Pch)
• Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V) IDSS = 100 A (max) (VDS = 60 V)
• Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25 )



Specifications

Characteristics
Symbol
Rating
Unit
Nch
Pch
Drain-source voltage
VDSS
60
-60
V
Drain-gate voltage (RGS = 20 k)
VDGR
60
-60
V
Gate-source voltage
VGSS
±20
±20
V
Drain current DC
ID
5
-5
A
Pulse
IDP
20
-20
Drain power dissipation
(1-device operation, Ta = 25 )
PD
2.2
W
Drain power dissipation
(6-device operation)
Ta = 25
PDT
4.4
W
Tc = 25
36
Single pulse avalanche energy
(Note 1)
EAS
129
273
mJ
Avalanche current
IAR
5
-5
A
Repetitive avalanche
energy (Note 2)
1 device
operation
EAR
0.22
mJ
6 device
operation
EART
0.44
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150


Note 1:
Condition for avalanche energy (single pulse) Nch: VDD = 25 V, starting Tch = 25 , L = 7 mH, RG = 25 , IAR = 5 A Pch: VDD = −25 V, starting Tch = 25 , L = 14.84 mH, RG = 25 , IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.




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