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MP4412

Features: • 4-V gate drivability• Small package by full molding (SIP 12 pins)• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)• Low drain-source ON resistance: RDS (ON) = 0.17 Ω (typ.)• High forward transfer admittance: |Yfs| = 4.5 S (t...

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SeekIC No. : 004425770 Detail

MP4412: Features: • 4-V gate drivability• Small package by full molding (SIP 12 pins)• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)• Low drain-source ON ...

MP4412 Data Sheet

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Part Number:
MP4412
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• 4-V gate drivability
• Small package by full molding (SIP 12 pins)
• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)
• Low drain-source ON resistance: RDS (ON) = 0.17 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V)
                                     IDSS = 100 µA (max) (VDS = 100 V)
• Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS 100 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V
Gate-source voltage VGSS ±20 V
Drain current DC ID 5 A
Pulse IDP 20
Drain power dissipation
(1-device operation, Ta = 25°C)		 PD 2.2 W
Drain power dissipation
(4-device operation)		 Ta = 25°C PDT 4.4 W
Ta = 25°C 28
Single Pulse avalanche energy
(Note 1)		 EAS 180 mJ
Avalanche current IAR 5 A
Repetitive avalanche
energy (Note 2)		 1-device
operation		 EAR 0.22 mJ
4-device
operation		 EART 0.44
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note 1: Condition for avalanche energy (single pulse) measurement VDD = 25 V, starting Tch = 25°C, L = 11.6 mH, RG = 25 Ω, IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.


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