Application• 4-V gate drivability• Small package by full molding (SIP 12 pin)• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)• Low drain-source ON resistance: RDS (ON) = 0.28 (typ.)• High forward transfer admittance: |Yfs| = 3.5 S (typ.)...
MP4411: Application• 4-V gate drivability• Small package by full molding (SIP 12 pin)• High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C)• Low drain-source ON ...
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Characteristics | Symbol | Rating | Unit | |
Collector-emitter voltage | VCEB | 50 | V | |
Collector-emitter voltage | VCEO | 60 ± 10 | V | |
Collector-emitter voltage | VEBO | 8 | V | |
Collector current | DC | IC | 2 | A |
Pulse | ICP | 3 | ||
Collector power dissipation (1 device operation) |
PC | 2.0 | W | |
Collector power dissipation (4 devices operation) |
PT | 4.0 | W | |
Junction temperature | Tj | 150 | °C | |
Storage temperature range | Tstg | −55 to 150 | °C |