MOCD223-M

Features:

• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #13616) (add option "V" for VDE approval, i.e, MOCD223V-M)
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• High Current Transfer Ratio of 500% Minimum at I_F= 1 mA
• Minimum BV_CEO of 30 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation Voltage of 2500 V_AC(rms) Guaranteed




Application

• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits




Pinout






Specifications

Rating	Symbol	Value	Unit
EMITTER
Forward Current - Continuous	IF	60	mA
Forward Current - Peak (PW = 100 s, 120 pps)	IF (pk)	1.0	A
Reverse Voltage	VR	6.0	V
LED Power Dissipation @ TA = 25°C Derate above 25°C	PD	90 0.8	mW mW/°C
DETECTOR
Collector-Emitter Voltage	VCEO	30	V
Collector-Base Voltage	VCBO	70	V
Emitter-Collector Voltage	VECO	7.0	V
Collector Current-Continuous	IC	150	mA
Detector Power Dissipation @ TA = 25°C Derate above 25°C	PD	150 1.76	mW mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage (1,2,3) (f = 60 Hz, 1 min. Duration)	VISO	2500	Vac(rms)
Total Device Power Dissipation @ TA = 25°C Derate above 25°C	PD	250 2.94	mW mW/°C
Ambient Operating Temperature Range	TA	-40 to +100	°C
Storage Temperature Range	Tstg	-40 to +150	°C
Lead Soldering Temperature (1/16" from case, 10 sec. duration)	TL	260	°C

Description

The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package.MOCD223-M is ideally suited for high density applications that require low input current and eliminates the need for through-the-board mounting.