MOCD211-M

Features: • U.L. Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option V for VDE approval, i.e, MOCD211V-M)• Minimum BVCEO of 30 Volts Guaranteed• Standard SOIC-8 Footprint, with 0.050 Lead Spacing• Compatible with Dual Wave, Vapor Phase an...

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SeekIC No. : 004425128 Detail

MOCD211-M: Features: • U.L. Recognized (File #E90700, Volume 2)• VDE Recognized (File #136616) (add option V for VDE approval, i.e, MOCD211V-M)• Minimum BVCEO of 30 Volts Guaranteed• ...

floor Price/Ceiling Price

Part Number:
MOCD211-M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOCD211V-M)
• Minimum BVCEO of 30 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed
• Compact Dual Channel Optocoupler





Application

• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits





Pinout






Specifications

Rating Symbol Value Unit
EMITTER
Forward Current - Continuous IF 60 mA
Forward Current - Peak (PW = 100 s, 120 pps) IF (pk) 1.0 A
Reverse Voltage VR 6.0 V
LED Power Dissipation @ TA = 25°C
Derate above 25°C
PD

90
0.8
mW
mW/°C
DETECTOR
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO 7.0 V
Collector Current-Continuous IC 150 mA
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
PD
150
1.76
mW
mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage (1,2,3) (f = 60 Hz, 1 min. Duration) VISO 2500 Vac(rms)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD

250
2.94
mW
mW/°C
Ambient Operating Temperature Range TA -40 to +100 °C
Storage Temperature Range Tstg -40 to +125 °C





Description

The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. MOCD211-M is ideally suited for high density applications and eliminates the need for through-the-board mounting.




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