Transistor Output Optocouplers Optocoupler Photodarlington
MOC8030: Transistor Output Optocouplers Optocoupler Photodarlington
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Input Type : | DC | Maximum Collector Emitter Voltage : | 80 V | ||
Isolation Voltage : | 5300 Vrms | Maximum Forward Diode Voltage : | 2 V | ||
Maximum Collector Current : | 150 mA | Maximum Power Dissipation : | 250 mW | ||
Maximum Operating Temperature : | + 110 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | PDIP-6 | Packaging : | Bulk |
Rating |
Symbol |
Value |
Unit |
Reverse Voltage |
VR |
3 |
Volts |
Forward Current - Continuous |
IF |
60 |
mA |
LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C |
PD |
120 1.41 |
mW mW/ |
CollectorEmitter Voltage |
VCEO |
80 |
Volts |
Collector Current Continuous |
IC |
150 |
mA |
EmitterCollector Voltage |
VECO |
5 |
Volts |
Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C |
PD |
150 1.76 |
mW mW/ |
Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) |
VISO |
7500 |
Vac(pk) |
Total Device Power Dissipation @ TA = 25°C Derate above 25°C |
PD |
250 2.94 |
mW mW/ |
Ambient Operating Temperature Range(2) |
TA |
55 to +100 |
|
Storage Temperature Range(2) |
Tstg |
55 to +150 |
|
Soldering Temperature (10 sec, 1/16, from case) |
TL |
260 |
The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors.
The MOC8030 and MOC8050 chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in applications susceptible to high EMI levels.
• No Base Connection for Improved Noise Immunity
• High CollectorEmitter Breakdown Voltage - 80 Volts Minimum
• Higher Sensitivity to Low Input Drive Current
• To order devices that are tested and marked per VDE 0884 requirements, the suffix "V" must be included at end of part number. VDE 0884 is a test option.