MNLPC662AM-X

· Rail-to-rail output swing.
·Micropower operation (<0.5mW).
·Specified for 100k Ohm and 5k Ohm loads.
· High voltage gain.                    120dB
· Low input offset voltage.          3mV
· Low offset voltage drift.            1.3uV/ C
·Ultra low input bias current.       2fA
· Input common-mode includes Gnd.
· Operating range from +5V to +15V.
· Low distortion.                          0.01% at 1kHz
· Slew rate.                                 0.11 V/uS
·Full military temperature range available.

· High-impedance buffer.
· Precision current-to-voltage converter.
· Long-term integrator.
· High-impedance preamplifier.
· Active filter.
· Sample-and-hold circuit.
· Peak detector.

Supply Voltage (V+ - V-)..............16V
Differential Input Voltage.......+Supply Voltage
Voltage at Input/Output Pin. . .(V+)+0.3V,(V-)-0.3V
Current at Input Pin...............+5mA
Current at Output Pin.......... ...+18mA
Current at Power Supply Pin....... ...35mA
Maximum Junction Temperature... ... ..150 C
Power Dissipation
(Note 2)............ ... ... ..25mW
Output Short Circuit to V+
(Note 4)
Output Short Circuit to V-
(Note 3)
Storage Temperature Range.. .. .-65 C to +150 C
Operating Temperature Range..-55 C < TA < +125 C
Thermal Resistance
(Note 6)
ThetaJA
8-Pin CERAMIC DIP (Still Air) .... ........TBD
(500LF/Min Air flow) ........ .... ....TBD
ThetaJC
8-Pin CERAMIC DIP................. TBD
Lead Temperature
(Soldering, 10 seconds)......... .... 260 C
ESD Tolerance
(Note 5)
(C = 100pF, R = 1.5k Ohm) ....... .. ..1000V

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 3: Applies to both single supply and split supply operation. Continous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150 C. Output currents in excess of +30mA over long term may adversely affect reliability.

Note 4: Do not connect output to V+ when V+ is greater than 13V or reliability may be adversely affected.

Note 5: Human body model, 1.5k Ohms in series with 100pF.

Note 6: All numbers apply for packages soldered directly into a PC board.

The LPC660 CMOS Dual operational amplifier is ideal for operation from a single supply.  LPC660  features a wide range of operating voltage from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input Vos, drift, and broadband noise as well as voltage gain (into 100k Ohm and 5k Ohm) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5mW.

This  LPC660  chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifer and LPC661 for a single CMOS operational amplifier with these same features.