MNLM6165-X

Supply Voltage
(V+ - V-)................................................. 36V
Differential Input Voltage Range
(Note 4).................................................±8V
Common-Mode Voltage Range
(Note 6).....................(V+ - 0.7V) to (V- - 7V)
Output Short Circuit to Gnd
(Note 3)......................................Continuous
Power Dissipation
(Note 2).............................................400mW
Soldering Information
(Soldering, 10 seconds)...................... 260 C
Storage Temperature Range...-65 C to +150 C
Maximum Junction Temperature...........150 C
Thermal Resistance
   ThetaJA
   CERDIP (Still Air) ...........................113 C/W
                 (500LF/Min Air flow) ..........51 C/W
   CERAMIC SOIC (Still Air) ................228 C/W
                       (500LF/Min Air flow) ..140 C/W
ThetaJC
   CERDIP 21 ...........................................C/W
   CERAMIC SOIC 21............................... C/W
Package Weight
   (Typical)
   CERDIP ................................................TBD
   CERAMIC SOIC ................................220mg
ESD Tolerance
(Note 4, 5)..........................................±500V

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.

Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax - (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower.

Note 3: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C.

Note 4: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially Vio, Ios, and Noise).

Note 5: The average voltage that the weakest pin combinations (those involving Pin 2 or Pin 3) can withstand and still conform to the datasheet limits. The test circuit used consists of the human body model of 100pF in series with 1500 Ohms.

Note 6: The voltage between V+ and either input pin must not exceed 36V.

The LM6165 high-speed amplifier exhibits an excellent speed-power product in delivering 300 V/uS and 725 MHz GBW (stable down to gains as low as +25) with only 5 mA of supply current. Further, power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V.

This LM6165 amplifier is built with National's VIP[TM] (Vertically Integrated PNP) proces which provides fast PNP transistors that are true complements to the already fast NPN devices.This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation.