DescriptionThe MN102H55G is a very good product. There is some information about the specifications of MN102H55G: (1)ROM (*8-bit): 128K; (2)RAM (*8-bit): 4K; (3)minimum instruction execution time: 58 ns (at 3.0 to 3.6 V, 34 MHz) with main clock operated; (4)A/D: 10-bit*8 ch (with S/H); (5)D/A: 8-...
MN102H55G: DescriptionThe MN102H55G is a very good product. There is some information about the specifications of MN102H55G: (1)ROM (*8-bit): 128K; (2)RAM (*8-bit): 4K; (3)minimum instruction execution time: ...
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The MN102H55G is a very good product.
There is some information about the specifications of MN102H55G: (1)ROM (*8-bit): 128K; (2)RAM (*8-bit): 4K; (3)minimum instruction execution time: 58 ns (at 3.0 to 3.6 V, 34 MHz) with main clock operated; (4)A/D: 10-bit*8 ch (with S/H); (5)D/A: 8-bit*2 ch; (6)PWM: 16-bit*5 ch (timer counter 8 to 2); (7)ICR: 16-bit*5 ch (timer counter 8 to 2); (8)OCR: 16-bit*5 ch (timer counter 8 to 2); (9)package: LQFP100P-1414.
What comes next is about the electrical characteristics of MN102H55G (Ta=25, VDD=AVDD=3.3 V, VSS=AVSS=0 V): first is about the A/D characteristics: (1)non-linear error: ±4 LSB max; (2)A/D conversion time: 373 s min at 34 MHz; (3)analog input voltage, VIA: VSS to VDD V; then is about the D/A characteristics: (1)non-linear error: ±3 LSB max when 8-bit; (2)setting time: 6s max at CL=70 pF; (3)analog output resistance: 3 k min, 12 k typ and 20 k max; the last one is about the supply current: (1)operating supply current, IDDopr: 50 mA max when VI=VDD or VSS, output release, f=34 MHz, VDD=33 V; (2)supply current at HALT, IDDH: 25 mA max at f=34 MHz, VDD=33 V, output release.