Transistors Switching (Resistor Biased) 100mA 50V BRT NPN
MMUN2211LT1: Transistors Switching (Resistor Biased) 100mA 50V BRT NPN
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Transistors Switching (Resistor Biased) 100mA 50V BRT PNP
Configuration : | Single | Transistor Polarity : | NPN | ||
Typical Input Resistor : | 10 KOhms | Typical Resistor Ratio : | 1 | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-23-3 | ||
Collector- Emitter Voltage VCEO Max : | 50 V | Continuous Collector Current : | 0.1 A | ||
Peak DC Collector Current : | 100 mA | Power Dissipation : | 246 mW | ||
Maximum Operating Temperature : | + 150 C | Packaging : | Reel |
`Simplifies Circuit Design
`Reduces Board Space and Component Count
`The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
`Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the13 inch/10,000 unit reel.
Rating |
Symbol |
Value |
Unit |
Collector-Base Voltage |
VCBO |
50 |
Vdc |
Collector-Emitter Voltage |
VCEO |
50 |
Vdc |
Collector Current |
IC |
100 |
mAdc |
Total Power Dissipation @ TA = 25 (Note 1.)Derate above 25 |
PD |
200 1.6 |
mW mW/ |
This new MMUN2211LT1 series of digital transistors is designed to replace a single device and its external resistor bias network. The MMUN2211LT1 BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.