Features: ·Epitaxial Planar Die Construction ·Ideal for Medium Power Amplification and Switching ·High Current Gain ·Ultra-Small Surface Mount PackageSpecifications Part Number MMST6427 Product Type NPN VCEO (V) 40 ICM (A) PD (W) 0.2 hFE Min 20000 hFE Max 200000...
MMST6427: Features: ·Epitaxial Planar Die Construction ·Ideal for Medium Power Amplification and Switching ·High Current Gain ·Ultra-Small Surface Mount PackageSpecifications Part Number MMST6427 Pr...
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·Epitaxial Planar Die Construction
·Ideal for Medium Power Amplification and Switching
·High Current Gain
·Ultra-Small Surface Mount Package
Part Number | MMST6427 |
Product Type | NPN |
VCEO (V) | 40 |
ICM (A) | |
PD (W) | 0.2 |
hFE Min | 20000 |
hFE Max | 200000 |
@ IC (A) | 0.05 |
VCE(SAT) Max (mV) | 1200 |
@ IB (mA) | 0.5 |
fT Min (MHz) |
Characteristic |
Symbol |
MMST6427 |
Unit |
Collector-Base Voltage |
VCBO |
40 |
V |
Collector-Emitter Voltage |
VCEO |
40 |
V |
Emitter-Base Voltage |
VEBO |
12 |
V |
Collector Current - Continuous (Note 1) |
IC |
500 |
mA |
Power Dissipation (Note 1) |
Pd |
200 |
mW |
Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
625 |
K/W |
Operating and Storage and Temperature Range |
Tj,TSTG |
-55 to +150 |
Note:
`Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.