Transistors Bipolar (BJT) 1A 40V PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A |
DC Collector/Base Gain hfe Min : | 20 at 500 mA at 1 V | Configuration : | Quad |
Maximum Operating Frequency : | 190 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOIC-16 |
Packaging : | Tube |
Rating |
Symbol |
Value |
Unit | |
CollectorEmitter Voltage |
VCEO |
40 |
Vdc | |
CollectorBase Voltage |
VCB |
40 |
Vdc | |
EmitterBase Voltage |
VEB |
5.0 |
Vdc | |
Collector Current - Continuous |
IC |
5.0 |
Adc | |
Each Transistor |
Four Transistors Equal Power |
|||
Power Dissipation @ TA = 25 Derate above 25 |
PD |
0.52 4.2 |
1.2 9.6 |
Watts mW/ |
Power Dissipation @ TC = 25 Derate above 25 |
PD |
1.0 8.0 |
2.5 20 |
Watts mW/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
55 to +150 |