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MMG05N60D

Features: ` Built-In Free Wheeling Diod` Built-In Gate Protection Zener Diod` Industry Standard Package (SOT223)` High Speed Eoff : Typical 6.5 J @ IC = 0.3 A; TC = 125C and dV/dt = 1000 V/s` Robust High Voltage Termination` Robust Turn-Off SOSpecifications Parameters Symbol Value ...

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SeekIC No. : 004423822 Detail

MMG05N60D: Features: ` Built-In Free Wheeling Diod` Built-In Gate Protection Zener Diod` Industry Standard Package (SOT223)` High Speed Eoff : Typical 6.5 J @ IC = 0.3 A; TC = 125C and dV/dt = 1000 V/s` Robust...

MMG05N60D Data Sheet

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Part Number:
MMG05N60D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Built-In Free Wheeling Diod
` Built-In Gate Protection Zener Diod
` Industry Standard Package (SOT223)
` High Speed Eoff : Typical 6.5 J @ IC  = 0.3 A; TC  = 125C and dV/dt = 1000 V/s
` Robust High Voltage Termination
` Robust Turn-Off SO




Specifications

Parameters

Symbol

Value

Unit

Collector-Emitter Voltag

VCES

600

Vdc

Collector-Gate Voltage ( RGE = 1.0 M)

VCGR

600

Vdc

Gate-Emitter Voltage - Continuo

VCGR

±15

Vdc

Collector Current-Continuous @ TC = 25
                          - Continuous @ TC = 90
                          - Repetitive Pulsed Current (1)

IC25
IC90
ICM

0.5
0.3
2.0

Adc

Total Device Dissipation @ TC = 25

PD

1.0

Watt

Operating and Storage Junction Temperature Range

TJ , Tstg

-55 to 15

Thermal Resistance - Junction to Case - IGBT
                                - Junction to Ambien

RJC
RJA

30
150

/W

Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds

TL

260




Description

This MMG05N60D IGBT contains a built-in free wheeling diode and a gat protection zener. Fast switching characteristics result in efficient operation at higher frequencies.




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