Features: ` Built-In Free Wheeling Diod` Built-In Gate Protection Zener Diod` Industry Standard Package (SOT223)` High Speed Eoff : Typical 6.5 J @ IC = 0.3 A; TC = 125C and dV/dt = 1000 V/s` Robust High Voltage Termination` Robust Turn-Off SOSpecifications Parameters Symbol Value ...
MMG05N60D: Features: ` Built-In Free Wheeling Diod` Built-In Gate Protection Zener Diod` Industry Standard Package (SOT223)` High Speed Eoff : Typical 6.5 J @ IC = 0.3 A; TC = 125C and dV/dt = 1000 V/s` Robust...
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` Built-In Free Wheeling Diod
` Built-In Gate Protection Zener Diod
` Industry Standard Package (SOT223)
` High Speed Eoff : Typical 6.5 J @ IC = 0.3 A; TC = 125C and dV/dt = 1000 V/s
` Robust High Voltage Termination
` Robust Turn-Off SO
Parameters |
Symbol |
Value |
Unit |
Collector-Emitter Voltag |
VCES |
600 |
Vdc |
Collector-Gate Voltage ( RGE = 1.0 M) |
VCGR |
600 |
Vdc |
Gate-Emitter Voltage - Continuo |
VCGR |
±15 |
Vdc |
Collector Current-Continuous @ TC = 25 - Continuous @ TC = 90 - Repetitive Pulsed Current (1) |
IC25 |
0.5 |
Adc |
Total Device Dissipation @ TC = 25 |
PD |
1.0 |
Watt |
Operating and Storage Junction Temperature Range |
TJ , Tstg |
-55 to 15 |
|
Thermal Resistance - Junction to Case - IGBT - Junction to Ambien |
RJC |
30 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds |
TL |
260 |
This MMG05N60D IGBT contains a built-in free wheeling diode and a gat protection zener. Fast switching characteristics result in efficient operation at higher frequencies.