Features: ·Epitaxial Planar Die Construction·Complementary PNP Type Available (MMDT5401)·Ideal for Medium Power Amplification and Switching·Ultra-Small Surface Mount PackagePinoutSpecifications Part Number MMDT5551 Product Type NPN + NPN VCEO (V) 160 IC (A) 0.2 ICM (A) - ...
MMDT5551: Features: ·Epitaxial Planar Die Construction·Complementary PNP Type Available (MMDT5401)·Ideal for Medium Power Amplification and Switching·Ultra-Small Surface Mount PackagePinoutSpecifications ...
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·Epitaxial Planar Die Construction
·Complementary PNP Type Available (MMDT5401)
·Ideal for Medium Power Amplification and Switching
·Ultra-Small Surface Mount Package
Part Number | MMDT5551 |
Product Type | NPN + NPN |
VCEO (V) | 160 |
IC (A) | 0.2 |
ICM (A) | - |
PD (W) | 0.2 |
hFE Min | 80 |
hFE Max | 250 |
@ IC (A) | 0.01 |
VCE (SAT) Max (mV) | 150 |
@ IC (A) | 0.01 |
@ IB (mA) | 1 |
fT Min (MHz) | 100 |
RCE (SAT) (m) | - |
Characteristic |
Symbol |
MMDT5551 |
Unit |
Collector-Base Voltage |
VCBO |
180 |
V |
Collector-Emitter Voltage |
VCEO |
160 |
V |
Emitter-Base Voltage |
VEBO |
6.0 |
V |
Collector Current - Continuous (Note 1) |
IC |
200 |
mA |
Power Dissipation (Note 1,2) |
Pd |
200 |
mW |
Thermal Resistance, Junction to Ambient (Note 1) |
RJA |
625 |
K/W |
Operating and Storage and Temperature Range |
Tj,TSTG |
-55 to +150 |
Notes:
`Valid provided that terminals are kept at ambient temperature.
`Maximum combined dissipation.