Transistors Bipolar (BJT) -150V 200mW
MMDT5401-7: Transistors Bipolar (BJT) -150V 200mW
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 150 V |
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.2 A |
DC Collector/Base Gain hfe Min : | 60 | Configuration : | Dual |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Packaging : | Reel |
Technical/Catalog Information | MMDT5401-7 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | 2 PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 150V |
Current - Collector (Ic) (Max) | 200mA |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 5A |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Packaging | Cut Tape (CT) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | MMDT5401 7 MMDT54017 MMDT5401DICT ND MMDT5401DICTND MMDT5401DICT |