MMDT4401 Selling Leads, Price trend, MMDT4401 DataSheet download, circuit diagram from SeekIC.com

Features: ·Epitaxial Planar Die Construction ·Ideal for Low Power Amplification and Switching·Ultra-Small Surface Mount Package Pinout Specifications Characteristic Symbol MMDT4401 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V ...

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SeekIC No. : 004423798 Detail

MMDT4401: Features: ·Epitaxial Planar Die Construction ·Ideal for Low Power Amplification and Switching·Ultra-Small Surface Mount Package Pinout Specifications Characteristic Symbol MMDT4401 U...

MMDT4401 Data Sheet

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Part Number:: MMDT4401
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Transistors Bipolar (BJT) 40V 200mW
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US $.1 - .31 / Piece

Transistors Bipolar (BJT) 40V 200mW

Product Details

Description

Features:

·Epitaxial Planar Die Construction
·Ideal for Low Power Amplification and Switching
·Ultra-Small Surface Mount Package

Pinout

Connection Diagram

Specifications

Characteristic	Symbol	MMDT4401	Unit
Collector-Base Voltage	V_CBO	60	V
Collector-Emitter Voltage	V_CEO	40	V
Emitter-Base Voltage	V_EBO	6.0	V
Collector Current - Continuous (Note 1)	I_C	200	mA
Power Dissipation (Note 1,2)	P_d	200	mW
Thermal Resistance, Junction to Ambient (Note 1)	R_JA	625	K/W
Operating and Storage and Temperature Range	T_j,T_STG	-55 to +150

Notes:
` Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
` Maximum combined dissipation.

Part Number	MMDT4401
Product Type	NPN + NPN
V_CEO (V)	40
I_C(A)	0.6
I_CM (A)	-
P_D (W)	0.2
h_FE Min	100
h_FE Max	300
@I _C (A)	0.15
V_CE(SAT) Max (mV)	400
@ I_C (A)	0.15
@ I_B (mA)	15
f_T Min (MHz)	250
R_{CE (SAT)} (m)	-

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MMDT4401

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