MMBZ6V2ALTI

Features:

• SOT23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
• Peak Power - 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform
• Maximum Clamping Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA
• ESD Rating of Class N (exceeding 16 kV) per the Human Body Model


Pinout




Description

These MMBZ6V2ALTI dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These MMBZ6V2ALTIs are ideal for situations where board space is at a premium.