MMBTH34

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : SOT-23
Power Dissipation : 225 mW
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 4 V
Collector- Emitter Voltage VCEO Max : 40 V
Maximum Operating Frequency : 500 MHz


Specifications

Collector-Base Voltage                                                    45V
Emitter-Base Voltage                                                     4.0V
Collector CurrentÐContinuous                                  100 mA
Total Device Dissipation, TA e 25°C                          350°C
    Derate above 25§C (Note 1)                         2.8 mW/°C
Operating Temperature Range                b55°C to a150°C
Storage Temperature Range                   b55°C to a150°C
Lead Temperature for 10 seconds                             300°C
Note 1: Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.

Description

This MMBTH34 was designed for common-emitter low noise amplifier and mixer applications in the 100 mA to 15 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.

Parameters:

Technical/Catalog Information	MMBTH34
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	500MHz
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 20mA, 2V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Gain	-
Power - Max	225mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTH34 MMBTH34