MMBTH11

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : SOT-23
Power Dissipation : 225 mW
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 3 V
Maximum Operating Frequency : 650 MHz
Collector- Emitter Voltage VCEO Max : 25 V


Specifications

Symbol	Parameter	Value	Units
VCEO	CollectorEmitter Voltage	25	V
VCEO	CollectorBase Voltage	30	V
VCEO	EmitterBase Voltage	3.0	V
IC	Collector current - Continuous	50	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 ~ +150

*These ratings are limiting values above which the serviceability of any semiconductor device
may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
    or low duty cycle operations.


Description

This MMBTH11 is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.

Parameters:

Technical/Catalog Information	MMBTH11
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	650MHz
Noise Figure (dB Typ @ f)	-
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25V
Gain	-
Power - Max	225mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MMBTH11 MMBTH11