MMBTH10

Transistors RF Bipolar Small Signal NPN RF Transistor

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SeekIC No. : 00218486 Detail

MMBTH10: Transistors RF Bipolar Small Signal NPN RF Transistor

floor Price/Ceiling Price

US $ .03~.05 / Piece | Get Latest Price
Part Number:
MMBTH10
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.05
  • $.05
  • $.04
  • $.03
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Maximum Operating Frequency : 650 MHz Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 3 V Continuous Collector Current : 0.05 A
Power Dissipation : 225 mW Maximum Operating Temperature : + 150 C
Package / Case : SOT-23 Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Packaging : Reel
Package / Case : SOT-23
Power Dissipation : 225 mW
Continuous Collector Current : 0.05 A
Emitter- Base Voltage VEBO : 3 V
Maximum Operating Frequency : 650 MHz
Collector- Emitter Voltage VCEO Max : 25 V


Pinout






Specifications

Part Number MMBTH10
Product Type NPN
VCEO(V) 25
IC (A) 0.05
ICM (A) -
PD (W) 0.3
hFE Min 60
hFE Max -
@ IC (A) 0.004
VCE (SAT) Max (mV) 500
@ IC (A) 0.004
@ IB (mA) 0.4
fT Min (MHz) 650
RCE (SAT) (m)





Parameters:

Technical/Catalog InformationMMBTH10
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)50mA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Gain-
Power - Max300mW
Compression Point (P1dB)-
Package / CaseSOT-23
PackagingDigi-Reel?
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBTH10
MMBTH10
MMBTH10FSDKR ND
MMBTH10FSDKRND
MMBTH10FSDKR



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