MMBTH10-4LT1

Transistors Bipolar (BJT) 25V VHF Mixer NPN

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SeekIC No. : 00213375 Detail

MMBTH10-4LT1: Transistors Bipolar (BJT) 25V VHF Mixer NPN

floor Price/Ceiling Price

Part Number:
MMBTH10-4LT1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 25 V
Emitter- Base Voltage VEBO : 3 V DC Collector/Base Gain hfe Min : 120 at 4 mA at 10 V
Configuration : Single Maximum Operating Frequency : 800 MHz (Min)
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Maximum DC Collector Current :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Emitter- Base Voltage VEBO : 3 V
Collector- Emitter Voltage VCEO Max : 25 V
DC Collector/Base Gain hfe Min : 120 at 4 mA at 10 V
Maximum Operating Frequency : 800 MHz (Min)


Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 25 Vdc
Collector-Base Voltage VCBO 30 Vdc

Emitter-Base Voltage
VEBO 3.0 Vdc



Description

MMBTH10-4LT1 specifications:

Pb-Free Package May be Available.

The G-Suffix Denotes a Pb-Free Lead Finish




Parameters:

Technical/Catalog InformationMMBTH10-4LT1
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Current - Collector (Ic) (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Gain-
Power - Max300mW
Compression Point (P1dB)-
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingTape & Reel (TR)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names MMBTH10 4LT1
MMBTH104LT1



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